Job Information
- Organisation/Company
- NaMLab gGmbH
- Department
- Research
- Research Field
- Physics » Solid state physicsPhysics » ElectronicsEngineering » Electrical engineeringChemistry » Physical chemistryTechnology » Materials technologyTechnology » Nanotechnology
- Researcher Profile
- First Stage Researcher (R1)
- Country
- Germany
- Application Deadline
- Type of Contract
- Temporary
- Job Status
- Full-time
- Hours Per Week
- 40
- Offer Starting Date
- Is the job funded through the EU Research Framework Programme?
- H2020
- Reference Number
- 101111890
- Is the Job related to staff position within a Research Infrastructure?
- No
Offer Description
NaMLab gGmbH is a research organization and associated institute of the Technical University Dresden. NaMLab provides industry-oriented and basic research in material science for electronic devices. Based on its key expertise in dielectric materials for semiconductor devices, NaMLab focuses on the integration and application of materials applied to reconfigurable and energy efficiency devices. NaMLab‘s approach of placing the device rather than the material system at the center of its research activities differentiates it from other world-class material research activities in the Dresden area. Additionally, it allows taking full advantage of the already existing expertise by forming orthogonal consortia. It, therefore, fills the gap between basic materials research and its application towards electronic circuits and systems.
Advanced semiconductor power devices are a key enabler for the technological transformation towards a sustainable world. Wide band gap Gallium Nitride (GaN) High-Electron-Mobility-Transistors (HEMT) are the backbone of lateral GaN devices for power applications entering the electronics market. A HEMT test structure device technology has been set up at NaMLab. In this position fundamental research has to be conducted to extend the gate technology of the HEMT device with a ferroelectric gate dielectric material, thereby tuning the device threshold voltage with polarization direction and enhancing device functionality in integrated circuits. The research work can make use of the very experienced kownledge of NaMLab with ferroelectric materials and GaN technology. The result of the scientific work shall be used to obtain a PhD in Electrical Engineering at the TU Dresden.
Requirements
- Research Field
- Engineering » Electrical engineering
- Education Level
- Master Degree or equivalent
- Research Field
- Engineering » Electronic engineering
- Education Level
- Master Degree or equivalent
- Research Field
- Chemistry » Physical chemistry
- Education Level
- Master Degree or equivalent
- Research Field
- Physics » Solid state physics
- Education Level
- Master Degree or equivalent
- Research Field
- Physics » Electronics
- Education Level
- Master Degree or equivalent
- Research Field
- Technology » Nanotechnology
- Education Level
- Master Degree or equivalent
- Research Field
- Technology » Materials technology
- Education Level
- Master Degree or equivalent
- Very good Master in physics, material science, electrical engineering or equivalent,
- Good knowledge of transistor device operation and semiconductor device physics, and knowledge of GaN transistors and/or ferroelectrics is a plus.
- Experiences and strong interest in electrical transistor characterization and data analyses
- Experiences or knowledge in semiconductor device fabrication
- Good technical comprehension, professional English communication and writing skills
- Ability to work in a team environment
- Strong perseverance in experimental work
- Self-organized and conscientious way of working
non
- Languages
- ENGLISH
- Level
- Excellent
- Languages
- GERMAN
- Level
- Basic
- Research Field
- Engineering » Electrical engineeringPhysics » Solid state physicsTechnology » Materials technology
Additional Information
- Collaboration with a dedicated, inspiring, interdisciplinary team working on leading technologies
- Research work on innovations originating from materials science and microelectronic devices
- focused guidance throughout the project
- Room for independent work and creative collaboration
- Flexible working time models for work life balance.
We value and encourage the diversity of our employee skills and therefore welcome all applications - regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, sexual orientation and identity.
- Two-Stage interview process after initial application forms received
Tasks
- Fabrication of transistors with semiconductor micro-technology processes in NaMLab cleanroom on available AlGaN/GaN heterostructure material.
- Electrical and physical characterization of these transistors for conceptual validation.
- Detailed electrical characterization in dynamic tests (switching) of the ferroelectric properties and their impact on device performance
- Process engineering and optimization in experiments for improvement of material properties and device performance
- Working in an interdisciplinary team together with other PhD students and technicians.
- Alignment in larger project consortia with academic and industrial partners
- Website for additional job details
Work Location(s)
- Number of offers available
- 1
- Company/Institute
- NaMLab gGmbH
- Country
- Germany
- State/Province
- Saxony
- City
- Dresden
- Postal Code
- 01187
- Street
- Nöthnitzer Straße 64a
Where to apply
- jobs@namlab.com
Contact
- State/Province
- Saxony
- City
- Dresden
- Website
- Street
- Noethnitzer Str. 64a
- Postal Code
- 01187
- jobs@namlab.com