PhD High quality Al rich AlGaN growth on layered BN for Chip scale UV Emitters (M/F)

The PhD student will work on the various technological building blocks of MOVPE epitaxial growth of UV LED structures and will also carry out material characterisation (XRD, AFM, SEM, PL, CL and electrical measurements).students must have a master's degree in engineering, physics or materials science.

The project aims at the mechanical release of III-nitride devices using h-BN is a promising approach for heterogeneous integration. Chip-scale technologies such as UV light-emitting diodes (LEDs) and cathodoluminescent (CL) chips are emerging and require considerable development to compete with conventional UV light sources such as mercury lamps and excimer lamps. Both technologies can benefit from the development of BN and the growth of high quality Al-rich AlGaN on BN. In this project, we aim to use 2D h-BN as an efficient buffer and sacrificial layer to grow high quality AlGaN for LED and LC chip development.