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One (1) PhD candidate position in ALL2GaN project - Affordable smart GaN IC solutions as enabler of greener applications

22 Jan 2024

Job Information

Organisation/Company
Foundation for Research and Technology
Department
Institute of Electronic Structure and Laser (IESL)
Research Field
Physics » Electronics
Researcher Profile
First Stage Researcher (R1)
Country
Greece
Application Deadline
Type of Contract
Temporary
Job Status
Negotiable
Offer Starting Date
Is the job funded through the EU Research Framework Programme?
H2020
Reference Number
130901
Is the Job related to staff position within a Research Infrastructure?
No

Offer Description

The Institute of Electronic Structure and Laser of the Foundation for and Technology Hellas (IESL - FORTH), in the framework of the project “ALL2GaN - Affordable smart GaN IC solutions as enabler of greener applications”, (Call: HORIZON-KDT-JU-2022-1-IA, GA 101111890) Funded under HORIZON-JU-IA - HORIZON JU Innovation Actions (HORIZON.2.4 - Digital, Industry and Space & HORIZON.2.4.2 - Key Digital Technologies Programs), is seeking to recruit one PhD candidate.

 

Job Description

We are seeking a skilled individual with a Master's degree in Physics or Materials Science and Technology to work on cutting-edge research on power electronic materials. The aim of the project is to investigate and identify the effect of extended and point defects on the properties of power-electronic materials. The PhD will work in close contact with experimental and industry partners.

Requirements

Research Field
Physics » Electronics
Education Level
Master Degree or equivalent
Languages
ENGLISH
Level
Excellent

Additional Information

Work Location(s)

Number of offers available
1
Company/Institute
FORTH/IESL
Country
Greece
State/Province
Crete
City
HERAKLIO
Postal Code
70013
Street
FORTH/IESL, N. PLASTIRA 100, V. VOUTON

Contact

State/Province
Crete
City
HERAKLIO
Website
Street
FORTH/IESL, N. PLASTIRA 100, V. VOUTON
Postal Code
70013