Job Information
- Organisation/Company
- Silicon Austria Labs
- Department
- Human Resources
- Research Field
- Engineering » Materials engineeringTechnology » Materials technology
- Researcher Profile
- First Stage Researcher (R1)
- Country
- Austria
- Application Deadline
- Type of Contract
- Temporary
- Job Status
- Full-time
- Hours Per Week
- 38.5
- Offer Starting Date
- Is the job funded through the EU Research Framework Programme?
- HE / MSCA COFUND
- Is the Job related to staff position within a Research Infrastructure?
- No
Offer Description
HiPIMS, or High-Power Impulse Magnetron Sputtering, is an advanced thin film deposition technique that has gained significant importance in the field of materials science and thin film technology. HiPIMS allows for highly precise control of the deposition process, making it possible to create thin films with exceptional uniformity, thickness, and microstructure. This level of control is crucial for applications where thin film properties must be tightly controlled, especially for epitaxial growth.
HiPIMS promotes better adhesion of the deposited film to the substrate due to the high-energy plasma pulses used in the process. This leads to films with higher density and improved mechanical properties, which are important for applications such as wear-resistant coatings. Thus, HiPIMS so far has been used extensively in the field of hard coatings, while its application in semiconductor technology is still lagging behind. HiPIMS can be performed at lower substrate temperatures compared to some other deposition techniques. This is advantageous for temperature-sensitive materials and allows for the deposition of films on a wider range of substrates. The fine-tuning of HiPIMS parameters can lead to improved film quality, reduced defects, and enhanced film performance, particularly in terms of optical, electrical, and mechanical properties. In combination with RF substrate bias, the epitaxial AlScN films can be grown at lower temperature controlling the crucial characteristics of films, such as their texture, impurity density, and residual stress.
This work will be focused on the hardware improvements necessary for the flexible growth parameters as well as the simulation of plasma generation, selective acceleration of ionized sputtered atoms and their charge states. The objective is to master the HiPIMS technique for growing epitaxial AlScN thin films for various applications in microsystems technology.
Requirements
- Research Field
- All
- Education Level
- Master Degree or equivalent
- Master's degree in the fields of experimental physics: optics, plasma physics, materials science.
- Advanced knowledge of film deposition techniques, piezoelectric materials, wide-bandgap semiconductors, condensed matter physics, material characterization.
- High level of hands-on ability and proven experimental skills in thin film metrology and characterization.
- Experience of working with magnetron sputtering systems is an advantage.
- Peer-reviewed publications related to thin film technology are a plus.
- Excellent written and oral communication skills in English.
- Enthusiasm for developing new ideas and a positive attitude towards new challenges.
- Ability to work independently, be well organised, produce high quality documents and meet deadlines.
- Project experience and/or publications in related fields are beneficial.
- Languages
- ENGLISH
- Level
- Excellent
Additional Information
In order for a JS candidate to be eligible for CRYSTALLINE, she or he has to comply with the MSCA-COFUND Doctoral Program (DP) eligibility rules, specific CRYSTALLINE application requirements, and with fundamental ethic principles.
The MSCA-COFUND DP rules require
researchers to (i) be doctoral candidates, i.e., not already in possession of a doctoral degree at the call deadline (whereas researchers who have successfully defended their doctoral thesis but who have not yet formally been awarded the doctoral degree will not be considered eligible), and to (ii) meet the MSCA mobility rule, i.e., have not resided and/or carried out their main activity (work, studies, etc.) in Austria for more than 12 months in the 3 years immediately before the call deadline (time spent as part of a procedure for obtaining refugee status under the Geneva Convention is not taken into account).
The CRYSTALLINE application requirements are met if an applicant (i) holds a master’s degree in a technical discipline, (ii) provides a complete set of application documents, and (iii) complies with the submission rules for the application documents as laid out at the CRYSTALLINE website.
Work Location(s)
- Number of offers available
- 9
- Company/Institute
- Silicon Austria Labs GmbH
- Country
- Austria
- Geofield
Where to apply
- Website
Contact
- State/Province
- Steiermark
- City
- Graz
- Website
- Street
- Sandgasse 34
- Postal Code
- 8010
- human.resources@silicon-austria.com