Outline
A fully tunable and efficient source of THz radiation is required for
a large number of security and medical applications. This project will
involve the design, fabrication and characterisation of such a source,
based on the non-linear optical process of difference frequency
generation in an integrated semiconductor laser structure.
The PhD will push the boundaries of quantum dot active region design
for lasing and non-linear optics, optical coupling design to maximise
tunability and introduce new concepts and fabrication strategies for
compound semiconductors coupled to Si, which is practically
dispersionless in the THz.
The project will be underpinned by a good understanding of optical and semiconductor
physics and will lead to the further understanding of the physics of light-matter
interactions, ultrafast laser physics and characterisation
techniques. This is an opportunity to exploit and develop desirable
skills in experimental physics and in semiconductor device fabrication.
The project background, and the materials and device development which
form the core of the programme also has strong relevance to a number of
other highly topical areas.
The student will integrate with the EPSRC funded Future Compound
Semiconductor Manufacturing Hub (CS Hub) research team and the Astronomy
Instrumentation Group (AIG), comprising post-doctoral research
associates, technicians and senior staff at Cardiff University, as well
as making use of Institute for Compound Semiconductors (ICS) facilities.
The project will follow a flexible timeline with completion feasible
within 4 years (including 0.5 year contingency with the first year
including a literature study and the development of suitable
experimental and computational skills. The remainder of the PhD will
include device development, device demonstrations and assessment and
completion of the thesis. The student will integrate with the CS Hub
research team comprising post-doctoral research associates, technicians
and senior staff at Cardiff University, and utilise Institute for
Compound Semiconductors (ICS) facilities.
Candidates should have a strong background and interest in Optics/Photonics and Semiconductor Physics
References:
(1) P. Finch, P. Blood, P.M. Smowton, A. Sobiesierski, R.M. Gwilliam,
I. O'Driscoll. “Femtosecond pulse generation in passively mode locked
InAs quantum dot lasers”, Applied Physics Letters, 103(13), 131109, DOI:
10.1063/1.4822433 (2013)
(2) S. Shutts, P.M. Smowton, A.B. Krysa. “Dual-wavelength InP quantum dot lasers”, Applied Physics Letters, 104, 241106; http://dx.doi.org/10.1063/1.4883857. (2014)
(3) Chen, W. Li, J. Wu, Q. Jiang, M. Tang, S. Shutts, S.N. Elliott,
A. Sobiesierski, A. Seeds, I. Ross, P.M. Smowton, H. Liu, “Electrically
pumped continuous-wave III–V quantum dot lasers on silicon.” Nature
Photonics 10, pp. 307-311. (2016) (10.1038/nphoton.2016.21)
What is funded
Self-Funded PhD Students Only
This PhD position is opening for self-funded student only, which
means the candidate with own funding to cover the living cost and
tuition fees will be considered.
Duration
4 years full-time.
Eligibility
Candidates should hold a good bachelor’s degree (first or upper
second-class honours degree) or a MSc degree in Physics or a related
subject.
Applicants whose first language is not English will be required to
demonstrate proficiency in the English language (IELTS 6.5 or
equivalent).
How to Apply
Applicants should submit an application for postgraduate study via the Cardiff University webpages (https://www.cardiff.ac.uk/study/postgraduate/research/programmes/program...) including:
• an upload of your CV
• a personal statement/covering letter
• two references
• Current academic transcripts
Applicants should select Doctor of Philosophy, with a start date of January 2021
In the research proposal section of your application, please specify
the project title and supervisors of this project and copy the project
description in the text box provided. In the funding section, please
select the ’self -funding’ option.