Post-doctoral position at University of Granada: Apply for an Athenea3i-2018 Research Fellowship at the Department of Nanoelectronics, Graphene and 2D semiconductors

Professor Francisco J. Gámiz Pérez, from the Department of Nanoelectronics, Graphene and 2D semiconductors at the University of Granada, welcomes postdoctoral candidates interested in applying for an Athenea3i Research Fellowship in 2018 at this University. The information about the Fellowship conditions, how to apply, Eligibility Criteria, Selection Process, Evaluation Process, etc. is available in https://athenea3i.ugr.es/. Please note that applicants must comply with the Eligibility Criteria (https://athenea3i.ugr.es/?page_id=23).

Brief description of the institution:

The University of Granada (UGR), founded in 1531, is one of the largest and most important universities in Spain. It serves more than 60000 students per year, including many foreign students, as UGR is the leader host institution in the Erasmus program. UGR, featuring 3650 professors and more than 2000 auxiliary personnel, offers a total of 75 degrees through its 112 departments and 28 centers.

UGR is also a leading institution in research, located in the top 5/10 of Spanish universities by a variety of ranking criteria, such as national R&D projects, fellowships awarded, publications, or international funding. UGR is one of the few Spanish Universities listed in the Shanghai Top 500 ranking (http://www.arwu.org/), and it is also well recognized for its web presence (http://www.4icu.org/top200/).

Internationally, we bet decidedly by our participation in the calls of H2020, both at partner and coordination. For the duration of the Seventh Framework Programme, the UGR has obtained a total of 66 projects, with total funding of 17.97 million euros, and for H2020, until 2015, more than 25 projects with total funding of more than 6 million euros. Our more than 3,000 researchers are grouped into 365 research groups covering all scientific fields and disciplines.

Brief description of the Centre/Research Group

The Nanoelectronics group at the CITIC-UGR is a dynamic and international group ideally located within an outstanding multi-disciplinary research environment with strong collaborations with the Chemistry, Physics and Electronics departments, and the Scientific Instrumentation Center of the UGR. The group is composed by 6 staff members with experience in the hosting and integrating post-doctoral researchers. They have a strong track record in training young scientists that have been integrated to industrial laboratories and in the academia. The Nanoelectronics Laboratory at UGR has numerous years of experience in the characterization and simulation of nanoelectronic devices. The group develops novel approaches for fabrication of nanodevices, 2D materials, biosensors, and works in the design of new measurement techniques that can lead to new physical insights. The group, leaded by Prof. Gamiz, has coordinated FP6-EUROSOI and FP7-EUROSOI+ European projects, and has participated in FP6-SINANO and FP7-NANOSIL Networks of Excellence, and in REACHING-22 project, awarded with Catrene Label, and leaded by STMicroelectronics and CEA-LETI. In H2020, Prof. Gamiz is coordinator of REMINDER European project, and participates in ECSEL-WAYTOGO-FAST project and in EU-NEREID. Prof.Gamiz has co-authored more than 350 refereed papers in major journal and international conference proceedings, several book chapters, and he is co-holder of several international patents related to multi-body 1T-DRAM. Prof. Gamiz has given more than 20 invited conferences about nanoelectronics all over the World.

Project description

The realization of molybdenum disulfide (MoS2) MOSFETs in 2011 triggered a tremendous amount of research into 2D materials. Today, hundreds of 2D materials are under investigation for their potential applicability in future nanoelectronic devices. Among the various materials, TMDs are among the most promising because they offer several highly desirable features:

1. band gaps appropriate for CMOS operation
2. high effective masses leading to reduced source-drain tunneling
3. thickness controllable at the atomic level to enable excellent electrostatics

However, important aspects of this novel technology, like for example the proper choice of contacts, 2D material thickness (number of layers), or the hysteresis in the transistor characteristics are only poorly understood. This proposal aims at combining fabrication, structural and electrical characterization, simulation and modeling with the following objectives: i) improve the fabrication techniques in order to obtain TMD mono-layers with better transport properties in a reproducible way, amenable to large scale production, ii) improve the performance of transistors based on TMDs, and, iii) develop and demonstrate applications of TMD-based structures as bio-sensors and memory cells.

The fabrication of TMD FETs and their applications will require the realization of two-dimensional TMDs by exfoliation and CVD, metal contacts, and the stacking of different 2D materials in the so-called Van der Waals structures. To study the obtained materials and devices and to improve the fabrication process, an extensive electrical and structural characterization of pristine layers and contacts will be performed. Finally, the simulation and modelling activities will provide feedback to all tasks regarding the properties of TMD layers.

Research Area

• Information Science and Engineering (ENG)
• Physics and Mathematics (PHY-MAT)

For a correct evaluation of your candidature, please send the documents below to Professor Francisco J. Gámiz Pérez (fgamiz@ugr.es):

• CV
• Letter of recommendation (optional)