Marie Skłodowska-Curie Actions

Near-Infrared Optoelectronic Devices with Atomically Controlled Graphene Nanostructures

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    30/06/2018 15:30 - Europe/Brussels
    H2020 / Marie Skłodowska-Curie Actions
    Spain, Bellaterra
    Institut Català de Nanociència i Nanotecnologia

Brief description of the institution:

ICN2 is a renowned research centre. Its research lines focus on the newly discovered physical and chemical properties that arise from the behaviour of matter at the nanoscale.

The Institute promotes collaboration among scientists from diverse backgrounds (physics, chemistry, biology, and engineering) to develop basic and applied research, while seeking out new ways to interact with local and global industry.

It also offers researchers training in nanotechnology, develops numerous activities to promote and enable the uptake of nanotechnology by industry, and promotes networking among scientists, engineers, technicians, business people, society, and policy makers.

ICN2 was accredited in 2014 as a Severo Ochoa Centre of Excellence and is a founding member of the Barcelona Institute of Science and Technology (BIST). The aim of the Severo Ochoa Program, sponsored by the Spanish Ministry of Economy, Industry and Competitiveness, are to identify and support those Spanish research centres that demonstrate scientific leadership and impact at global level.

Brief description of the Research Group:

The Atomic Manipulation and Spectroscopy Group (AMS, http://ams.icn2.cat/) is at the core of this research plan bridging fundamental knowledge on materials properties with device performance. Research at AMS is focused on the synthesis of 2D materials with novel electronic, magnetic and optical phenomena that can be applied in future nanodevices. The group combines scanning probe microscopy techniques with synchrotron radiation spectroscopy. This atomic scale studies are now being extended to device arquitectures, aiming to correlate microscopic phenomena to macroscopic observables of relevance to the understanding and design of new materials and devices.

Project description:

Graphene has emerged as a wonder material due in part to its extraordinary electro-optical response. Order-unity changes in absorption have been predicted and experimentally observed due to the switching on and off of plasmons via electrical gating, thus suggesting application to ultrafast light modulation. Unfortunately, graphene plasmons have so far been observed at mid-infrared frequencies, therefore limiting their use in optoelectronic devices. Reaching this energy/wavelength regime requires an efficient doping, and a reduction of the lateral dimension below 5 nm, which is beyond the state-of-art top-down lithography resolution.

Recently, the AMS group has developed a method to synthesize atomically precise, 1nm wide graphene nanoribbons (GNRs) that can couple laterally to give rise to a nanoporous graphene structure (C. Moreno et al. Science 360, 199, 2018). The new nanomaterial can be also regarded as a highly interconnected array of low-gap semiconducting GNRs, both the gap size and interconnection being critical for an efficient gate-doping.


In this project we aim at exploring the feasibility of fabricating optoelectronic devices based on atomically precise graphene nanostructures. The proof of concept of such device will pave the path for graphene optoelectronics in the visible and near-infrared spectral window.


Our multidisciplinary experimental approach will be based on the (i) synthesis of nanostructured graphene and characterization with STM/STS, XPS and ARPES; (ii) transfer of the nanostructured graphene onto dielectric substrates and characterization by Raman, PEEM, and TEM; (iii) Fabrication of nanodevices by electron beam lithography; (iv) optical characterization by confocal microscopy.



All applications must be sent to Aitor Mugarza (aitor.mugarza@icn2.cat) and include the following:

  • A full CV including contact details.
  • Motivation letter.
  • 2 recommendation letters.


Deadline for applications: 30th June 2018