28/03/2022
Marie Skłodowska-Curie Actions

MSCA-PF: Joint application at the University of Granada. Department of Nanoelectronics, Graphene and 2D materials.


  • OFFER DEADLINE
    30/09/2022 23:00 - Europe/Brussels
  • EU RESEARCH FRAMEWORK PROGRAMME
    HE / MSCA
  • LOCATION
    Spain, Granada
  • ORGANISATION/COMPANY
    International Research Projects Office
  • DEPARTMENT
    Promotion and Advisory Unit
  • LABORATORY
    NA

Professor Francisco Gamiz Perez, from the Department of Nanoelectronics, Graphene and 2D materials at the University of Granada, welcomes postdoctoral candidates interested in applying for a Marie Skłodowska-Curie Postdoctoral Fellowship (MSCA-PF) in 2022 at this University. Please note that applicants must comply with the Mobility Rule (for more information about the 2022 call, please consult: http://sl.ugr.es/0cmA).

Brief description of the institution:

The University of Granada (UGR) was founded in 1531 and is one of the largest and most important universities in Spain. With over 60,000 undergraduate and postgraduate students and 6,000 members of staff, the UGR offers over 70 undergraduate degrees, 100 master’s degrees (9 of which are international double degrees) and 28 doctoral programmes via its 127 departments and 22 centers. Accordingly, the UGR offers one of the most extensive and diverse ranges of higher education programmes in Spain.

The UGR has been awarded with the "Human Resources Excellence in Research (HRS4R)", which reflects the institution’s commitment to continuously improving its human resource policies in line with the European Charter for Researchers and the Code of Conduct for the Recruitment of Researchers. The UGR is also internationally renowned for its excellence in diverse research fields and ranked among the top Spanish universities in a variety of ranking criteria, such as national R&D projects, fellowships awarded, publications, and international funding.

The UGR is one of the few Spanish Universities listed in the Shanghai Top 500 ranking - Academic Ranking of World Universities (ARWU). The 2021 edition of the ARWU places the UGR in 201-300th position in the world and as the second highest ranked university in Spain (http://sl.ugr.es/0cmF), reaffirming its position as an institution at the forefront of national and international research. The UGR stands out in the specialties of Library & Information Science (position 36); Food Science & Technology (39) and Hospitality & Tourism Management (51-75), according to the latest edition of this prestigious ranking by specialties (http://sl.ugr.es/0bSp). A little lower in the ranking, the UGR also stands out in Mathematics (76-100) and Mining & Mineral Engineering (76-100).

Additionally, the UGR has 7 researchers who are at the top of the Highly Cited Researchers (HCR) list (http://sl.ugr.es/0cmD), most of these related to the area of Computer Science. It is also well recognized for its web presence (http://sl.ugr.es/0a6i), being positioned at 54th place in the top 200 Universities in Europe.

Internationally, the University of Granada is firmly committed to its participation in the calls of the Framework Programme of the European Union. For the duration of the last two Framework Programmes, the UGR has obtained a total of 67 projects, with total funding of 18.029 million euros, and for H2020, 119 projects with a total funding of around 29.233 million euros.

Brief description of the Centre/Research Group:

The Group of Nanoelectronics is formed by 10 members from different disciplines: Electrical, Computer Science and Material Science Engineers, Chemists, Physics. The only goal of this Group is a better understanding of Nanoelectronic devices and their applications. Along the last five years (2017-2022), the NRG has developed different research lines which can be grouped as follows:

a) Basic research lines:

1. Structural & Electrical characterization. 2. Simulation and modeling. 3. Fabrication, structural and electrical characterization and simulation of 2D semiconductors 4. Co-integration of 2D TMD semiconductors with Si-CMOS

b) End-user focused research lines:1. Design of dedicated nanodevices (“More Moore” + “Beyond CMOS”); 2. Biomedical applications of Nanoelectronics (“More than Moore”).

Production last five years:

- Articles: 52

- Communications: 41

- Books: 2

- Book chapters: 6

- Funded projects: 12

- Patents: 5

- Ph.D. Thesis: 8

- Master Thesis: 10

- Funding: 3M€

Specifically, in relationship with the topic of the proposal, the NRG has a long record of activities in the fabrication, and characterization of high-quality 2D materials layers. These activities have been reinforced with the setup of new infrastructures for the growing by PE-CVD and PE-ALD 2D-material monolayers, a clean room full-equipped for the fabrication of nanoelectronics devices and prototypes, including laser and optical lithography, e-beam and sputtering metallization. Our clean-room is equipped with structural characterization systems, as AFM, EDX-SEM and Raman microscopies. Our goal is to take advantage of these knowledge and expertise to design strategies which allow the co-integration of 2D materials on top of Back-End-Of-Line of CMOS integrated circuits.

Project description:

The evolutionary path of Si technology, driven by Moore’s Law, seems to be narrowing and fast approaching an end simply due to the fundamental limitations of Si at the atomic scale. High quality 2D materials (graphene and transition-metal-dichalcogenides, TMDs) are promising next-generation alternatives, but are at least a decade away from making inroads to the conventional semiconductor industry. It took decades of research for Si technology to become the ultimate benchmark for all other electronic devices. In fact, it is unlikely that 2D technology will supplant Si; but instead may coexist with Si technology. This will require significant research and resource investment in large area growth of electronic-grade 2D materials at temperatures compatible with silicon-based technology. Unlike 3D semiconductors (Si, Ge and III-V) which necessarily need a crystalline substrate to be grown on it, 2D materials can be directly grown on amorphous surfaces or transferred onto them after being grown on a separate substrate. This fact is crucial because would allow the integration of TMD materials into silicon-based fabrication lines with a relatively low engineering effort. In this framework, the present research aims at demonstrating the co-integration of high- performance 2D-material devices with CMOS chips with production costs as low as for silicon technology. To do so, the objectives of the proposal are: i) Understanding both theoretical and experimentally the properties of 2D-material-based devices, ii) developing a technology platform which allows the 3D-integration of electronic-grade 2D materials at wafer scale and at temperatures compatible with CMOS processing; and iii) the operation of a prototype of a fully-integrated TMD-CMOS system-on-chip.

Research Area:

  • Information Science and Engineering (ENG)
  • Physics (PHY)

For a correct evaluation of your candidature, please send the documents below to Professor Francisco Gamiz Perez (fgamiz@ugr.es):

  • CV
  • Letter of recommendation (optional)

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