25/03/2020
Marie Skłodowska-Curie Actions

MSCA-IF: Joint application at the University of Granada. Department of Nanoelectronics, Graphene and 2D materials.


  • OFFER DEADLINE
    01/07/2020 15:30 - Europe/Brussels
  • EU RESEARCH FRAMEWORK PROGRAMME
    H2020 / Marie Skłodowska-Curie Actions
  • LOCATION
    Spain, Granada
  • ORGANISATION/COMPANY
    International Research Projects Office
  • DEPARTMENT
    Promotion and Advisory Unit
  • LABORATORY
    NA

Professor Francisco Gamiz Perez, from the Department of Nanoelectronics, Graphene and 2D materials at the University of Granada, welcomes postdoctoral candidates interested in applying for a Marie Skłodowska-Curie Individual Fellowships (MSCA-IF) in 2020 at this University. Please note that applicants must comply with the Mobility Rule (more information: http://sl.ugr.es/0aNV).

Brief description of the institution:

The University of Granada (UGR), founded in 1531, is one of the largest and most important universities in Spain. The UGR has been awarded with the "Human Resources Excellence in Research (HRS4R)", which reflects the UGR’s commitment to continuously improve its human resource policies in line with the European Charter for Researchers and the Code of Conduct for the Recruitment of Researchers. The UGR is also a leading institution in research, located in the top 5/10 of Spanish universities by a variety of ranking criteria, such as national R&D projects, fellowships awarded, publications, or international funding.

UGR is one of the few Spanish Universities listed in the Shanghai Top 500 ranking (http://sl.ugr.es/0aw0). The Academic Ranking of World Universities (ARWU) places the UGR in 268th position in the world and as the 4th highest ranked University in Spain, reaffirming its position as an institution at the forefront of national and international research. From the perspective of specialist areas in the ARWU rankings, the UGR is outstanding in Documentation (ranked in the 36th in the world) or Food science technology (ranked 37th in the world), Mathematics and Computer Science (ranked among the top 76-100 in the world).

The UGR has 4 researchers at the top of the Highly Cited Researchers (HCR) list in the Computer Science area. With regard to broader subject fields, the UGR is ranked in 45th position in the universities worldwide in the discipline of Engineering. It is also well recognized for its web presence (http://sl.ugr.es/0a6i) taking 36th place in the top 200 Universities in Europe. Internationally, we bet decidedly by our participation in the calls of the Framework Programme of the European Union. For the duration of the last two Framework Programmes, the UGR has obtained a total of 66 projects, with total funding of 18.02 million euros, and for H2020, 80 projects with total funding around 20.6 million euros.

Brief description of the Centre/Research Group

The Group of Nanoelectronics is formed by 10 members from different disciplines: Electrical, Computer Science and Material Science Engineers, Chemists, Physics. The only goal of this Group is a better understanding of Nanoelectronic devices and their applications. Along the last five years (2015-2019), the NRG has developed different research lines which can be grouped as follows:

a) Basic research lines:

1. Structural & Electrical characterization. 2. Simulation and modeling. 3. Fabrication, structural and electrical characterization and simulation of 2D semiconductors 4. Co-integration of 2D TMD semiconductors with Si-CMOS

b) End-user focused research lines:1. Design of dedicated nanodevices (“More Moore” + “Beyond CMOS”); 2. Biomedical applications of Nanoelectronics (“More than Moore”).

Production last five years:

• Articles: 52

• Communications: 41

• Books: 2

• Book chapters: 6

• Funded projects: 12

• Patents: 5

• Ph.D. Thesis: 8

• Master Thesis: 10

• Funding: 3M€

Specifically, in relationship with the topic of the proposal, the NRG has a long record of activities in the design of sensors and biosensors using pseudo-MOSFETs. These activities have been reinforced with the setup of new infrastructures for the growing by CVD and PE-ALD 2D-material monolayers, a clean room full-equipped for the fabrication of nanoelectronics devices and prototypes. Our goal is to take advantage of these knowledge and expertise and use the cancer biomarkers identified and developed in the previous stages of this proposal for the early and accurate diagnosis of several types of cancer.

Project description

The evolutionary path of Si technology, driven by Moore’s Law, seems to be narrowing and fast approaching an end simply due to the fundamental limitations of Si at the atomic scale. High quality 2D materials (graphene and transition-metal-dichalcogenides, TMDs) are promising next-generation alternatives, but are at least a decade away from making inroads to the conventional semiconductor industry. It took decades of research for Si technology to become the ultimate benchmark for all other electronic devices. In fact, it is unlikely that 2D technology will supplant Si; but instead may coexist with Si technology. This will require significant research and resource investment in large area growth of electronic-grade 2D materials at temperatures compatible with silicon-based technology. Unlike 3D semiconductors (Si, Ge and III-V) which necessarily need a crystalline substrate to be grown on it, 2D materials can be directly grown on amorphous surfaces or transferred onto them after being grown on a separate substrate. This fact is crucial because would allow the integration of TMD materials into silicon-based fabrication lines with a relatively low engineering effort. In this framework, the present research aims at demonstrating the co-integration of high- performance 2D-material devices with CMOS chips with production costs as low as for silicon technology. To do so, the objectives of the proposal are: i) Understanding both theoretical and experimentally the properties of 2D-material-based devices, ii) developing a technology platform which allows the 3D-integration of electronic-grade 2D materials at wafer scale and at temperatures compatible with CMOS processing; and iii) the operation of a prototype of a fully-integrated TMD-CMOS system-on-chip: a gas sensor system.

Research Area

Information Science and Engineering (ENG)

For a correct evaluation of your candidature, please send the documents below to Professor Francisco Gamiz Perez (fgamiz@ugr.es):

  • CV
  • Letter of recommendation (optional)

Disclaimer:

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