31/05/2022

"Process engineering and AFM characterization" Post-doctoral fellowship in microelectronics

This job offer has expired


  • ORGANISATION/COMPANY
    GREMAN (UMR CNRS 7347)
  • RESEARCH FIELD
    EngineeringElectronic engineering
    EngineeringMaterials engineering
    EngineeringMicroengineering
  • RESEARCHER PROFILE
    Recognised Researcher (R2)
  • APPLICATION DEADLINE
    03/10/2022 12:00 - Europe/Brussels
  • LOCATION
    France › Tours
  • TYPE OF CONTRACT
    Temporary
  • JOB STATUS
    Full-time
  • HOURS PER WEEK
    35
  • OFFER STARTING DATE
    07/11/2022

OFFER DESCRIPTION

Porous silicon and wide band-gap semiconductors (SiC, GaN) are the subject of intensive research and development activities. This growing attention is motivated by the attractive properties of these materials, suitable to achieve efficient electrical devices.

Since many years, in the framework of numerous national or European projects, GREMAN has developed know-how on these topics, from the material elaboration to the electrical characterization of the devices achieved. But to ensure a wide understanding of the electrical behavior, characterization step is required at the nanoscale.

By means of the Atomic Force Microscopy (AFM) electrical modes (Scanning Spreading Resistance Microscopy, Scanning Capacitance Microscopy, conductive AFM …), it is possible to get local information about the electrical activity of the defects or the carrier profiles. This evaluation is crucial to develop efficient electrical devices, based on porous silicon and/or on wide band-gap semiconductors.

 

As a post-doctoral applicant, you will have to elaborate porous semiconductor materials (silicon or silicon carbide) in cleanroom environment. This materials are synthetized by electrochemistry in hydrofluoric acid based solutions. The etching conditions must be optimized adjusting the applied current density or the electrolyte conditions. These porous semiconductors exhibit remarkable electrical and thermal properties that suitable for many applications in microelectronics.

The characterization of a wide variety of samples will be performed by means of AFM electrical modes available (SSRM, SCM, c-AFM …) at GREMAN. Your capacity to work in close collaboration with other people of the team (PhD students, post-doctoral applicants, professors…) is crucial.

Our team is directly located on the STMicroelectronics site of Tours, where are located the cleanroom and the characterization tools.

 

More Information

Selection process

Contact  Persons  for the appliance :

Pr. Daniel ALQUIER

E-mail : daniel.alquier@univ-tours.fr

Pr. Gael GAUTIER

E-mail : gael.gautier@univ-tours.fr

Dr. Jean-François MICHAUD

E-mail : jean-francois.michaud@univ-tours.fr

Visit our websites:

https://greman.univ-tours.fr

https://certem.univ-tours.fr

Additional comments

This work is conducted in the framework of the project ANR-TEMPOSCOPY funded by the ANR (Agence Natioanale de la Recherche)

Offer Requirements

Skills/Qualifications

The candidate must have a doctoral degree in semiconductor physics or material science, and:

  • Knowledge in semiconductors with a significant experience in cleanroom
  • Expert in the electrical modes of AFM (SSRM, SCM …)
  • Experience on wide band-gap materials and/or on porous silicon would be appreciated
  • Ability to work in close collaboration with the team members
  • English language necessary

 

To apply for this position, a CV, a cover letter including date available to start and the names of three references are mandatory.

Contract duration: 1 year minimum

Work location(s)
1 position(s) available at
GREMAN (UMR CNRS 7347)
France
Tours
37071
26, rue Pierre et Marie Curie

EURAXESS offer ID: 792411

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