PhD on New topological and Dirac materials based on III-V semiconductors

The scientific objective is to unravel the topological properties of the antimonide III-V semiconductor technology, and to evaluate possible applications.

The project aims at generating new 2D and 3D topological and Dirac materials based on InAs/AlSb/GaSb heterostructures. The novel 2D quantum spin Hall insulators are expected to exhibit topological gaps one order of magnitude larger than that of similar heterostructures investigated up to now. Another innovation is based on the design of new artificial 3D topological Dirac semi-metals, based on InAs/GaSb/AlSb superlattices. Depending on the thickness of the layers and the crystal orientation, these various 2D and 3D structures should also exhibit other exotic topological phases and their associated relativistic particles. These quantum materials will be studied through THz spectroscopy and quantum transport.