The mission of the CDD researcher candidate will be to manufacture semiconductor devices in the Institute's Micro Nano Fabrication (CMNF) center. It discusses the manufacture of Schottky diode based on GaN on GaN and Sapphire substrate with the objective of operation in the THz and high temperature range. The candidate will also be responsible for the characterization of these Schottky diodes.

On an existing process, the main objective of the activity will be to optimise in fine detail the technological streps of the fabricating process of a GaN Schottky diode and to participate continuously in its development or to develop new processes. The work will consist of an exhaustive microwave characterisation of these components.

The work will be carried out within the ANODE (Advanced Nanometric Device) team of the IEMN, which is specialised, among other things, in the fabrication and characterisation of very high frequency components. THz applications is one of the group's specialities.
The activity will be mainly focused on clean room work but will also include measurements of devices made in IEMN's characterisation centre.
He/she will have specific training in the relative safety of the cleanroom and will be introduced to specific technological techniques for using the various resources available.
The IEMN is a Joint Research Unit involving the CNRS, the University of Lille, the Polytechnic University of Hauts-de-France, Centrale Lille and ISEN JUNIA. Its equipment for the design, manufacture and characterisation of devices is at the highest European level. The institute has about 230 permanent staff (professors, researchers, engineers and administrative personnel) and about 150 PhD students. The research carried out at the IEMN covers a vast field ranging from the physics of materials and nanostructures to telecommunications systems and acoustic and microwave instrumentation.