RESEARCH FIELDPhysics › Applied physics
RESEARCHER PROFILEFirst Stage Researcher (R1)
APPLICATION DEADLINE10/10/2017 00:00 - Europe/Brussels
LOCATIONPoland › Warsaw
TYPE OF CONTRACTTemporary
HOURS PER WEEK24
OFFER STARTING DATE22/10/2017
Influence of point defects on InGaN quantum well decomposition in technology of blue/green laser diodes and LEDs
In the Project, we will explain the role of point defects (mainly Ga vacancies and hydrogen impurity) in decomposition of InGaN quantum wells. This decomposition occurs during MOVPE growth of p-type GaN above these wells in LEDs and laser diodes (LDs) emitting in blue/green spectral range, and is one of the main reasons why the efficiencies of green emitters have low efficiencies ("green gap"). In our recent research, we got for the first time indications that the InGaN decomposition is caused by strain-driven diffusion of point defects. To understand this phenomenon, we are planning to do a number of experiments changing growth parameters (doping, flows of reactants, pressure, temperature, etc) in epitaxial growth, as well as to do theoretical modelling of point defect and indium diffusion. The samples will be examined using a number of techniques in collaboration with other labs. As a result, we should find the way of avoiding the InGaN decomposition in LEDs and LDs.
Full remuneration 7 000 PLN per month
(expected net salary at 4 900 PLN per month)
The recruitment procedure is described in the TEAM call documentation in section 5.4 and available on the FNP website http://www.fnp.org.pl/assets/TEAM_Programme_Competition_Documentation_4_...
Recruitment interviews will be held on 13 October 2017 at
IHPP PAS in Warsaw, address: al. Prymasa Tysiąclecia 98 in the New
Technology Building, starting from 9.30 AM. In a case of a requirement
it could be changed to the skype interview.
Web site for additional job details
Required Research Experiences
YEARS OF RESEARCH EXPERIENCE4 - 10
REQUIRED EDUCATION LEVELPhysics: PhD or equivalent
REQUIRED LANGUAGESENGLISH: Good
Key responsibilities include:
Carry out of High Resolution X-Ray Diffraction (HR-XRD) experiments and interpretation of the results. Measurements and interpretation of nitrides epitaxial structures such as multi-quantum wells (MQW), light emitting diodes (LED) and laser diodes (LD).
Profile of candidates/requirements:
1.PhD Diploma (No more than 5 years).
2.Good knowledge of dynamical and kinematical theory of X-ray diffraction
3.Experience in carrying out of HR-XRD experiments and interpretation of the results of measurements of nitrides epitaxial structures such as multi-quantum wells (MQW), light emitting diodes (LED) and laser diodes (LD).
4.Good spoken and written English.
5.Strong motivation for scientific work. Motivation for the research work
3.Summary of professional accomplishments with concise information about the candidate interests and scientific achievements.
4. A copy of PhD diploma.
EURAXESS offer ID: 244923