12/09/2017

Post-Doc - HR-XRD Measurements (Temporary Employment Contract)


  • ORGANISATION/COMPANY
    FluGaN
  • RESEARCH FIELD
    PhysicsApplied physics
  • RESEARCHER PROFILE
    First Stage Researcher (R1)
  • APPLICATION DEADLINE
    10/10/2017 00:00 - Europe/Brussels
  • LOCATION
    Poland › Warsaw
  • TYPE OF CONTRACT
    Temporary
  • JOB STATUS
    Part-time
  • HOURS PER WEEK
    24
  • OFFER STARTING DATE
    22/10/2017
  • REFERENCE NUMBER
    TEAM/2016-3/26

Project title:

 

Influence of point defects on InGaN quantum well decomposition in technology of blue/green laser diodes and LEDs

In the Project, we will explain the role of point defects (mainly Ga vacancies and hydrogen impurity) in decomposition of InGaN quantum wells. This decomposition occurs during MOVPE growth of p-type GaN above these wells in LEDs and laser diodes (LDs) emitting in blue/green spectral range, and is one of the main reasons why the efficiencies of green emitters have low efficiencies ("green gap"). In our recent research, we got for the first time indications that the InGaN decomposition is caused by strain-driven diffusion of point defects. To understand this phenomenon, we are planning to do a number of experiments changing growth parameters (doping, flows of reactants, pressure, temperature, etc) in epitaxial growth, as well as to do theoretical modelling of point defect and indium diffusion. The samples will be examined using a number of techniques in collaboration with other labs. As a result, we should find the way of avoiding the InGaN decomposition in LEDs and LDs.

Benefits

Full remuneration 7 000 PLN per month

(expected net salary at 4 900 PLN per month)

Selection process

The recruitment procedure is described in the TEAM call documentation in section 5.4 and available on the FNP website http://www.fnp.org.pl/assets/TEAM_Programme_Competition_Documentation_4_...

Recruitment interviews will be held on 13 October 2017 at

IHPP PAS in Warsaw, address: al. Prymasa Tysiąclecia 98 in the New

Technology Building, starting from 9.30 AM. In a case of a requirement

 it could be changed to the skype interview.

 

Web site for additional job details

Required Research Experiences

  • RESEARCH FIELD
    Physics
  • YEARS OF RESEARCH EXPERIENCE
    4 - 10

Offer Requirements

  • REQUIRED EDUCATION LEVEL
    Physics: PhD or equivalent
  • REQUIRED LANGUAGES
    ENGLISH: Good

Skills/Qualifications

Key responsibilities include:

Carry out of High Resolution X-Ray Diffraction (HR-XRD) experiments and interpretation of the results. Measurements and interpretation of nitrides epitaxial structures such as multi-quantum wells (MQW), light emitting diodes (LED) and laser diodes (LD).

Profile of candidates/requirements:

 

1.PhD Diploma (No more than 5 years).

2.Good knowledge of dynamical and kinematical theory of X-ray diffraction

3.Experience in carrying out of HR-XRD experiments and interpretation of the results of measurements of nitrides epitaxial structures such as multi-quantum wells (MQW), light emitting diodes (LED) and laser diodes (LD).

4.Good spoken and written English.

5.Strong motivation for scientific work. Motivation for the research work

 

 

Specific Requirements

Required documents:

 

1.Application form.

2.Curriculum Vitae

3.Summary of professional accomplishments with concise information about the candidate interests and scientific achievements.

4. A copy of PhD diploma.

 

Map Information

Job Work Location Personal Assistance locations
Work location(s)
1 position(s) available at
FluGaN
Poland
Warsaw
01-424
Al. Prymasa Tysiaclecia 98

EURAXESS offer ID: 244923