06/09/2017

Post-Doc - MOVPE Growth (Temporary Employment Contract)


  • ORGANISATION/COMPANY
    FluGaN
  • RESEARCH FIELD
    PhysicsApplied physics
  • RESEARCHER PROFILE
    First Stage Researcher (R1)
  • APPLICATION DEADLINE
    03/10/2017 00:00 - Europe/Brussels
  • LOCATION
    Poland › Warsaw
  • TYPE OF CONTRACT
    Temporary
  • JOB STATUS
    Part-time
  • HOURS PER WEEK
    32
  • REFERENCE NUMBER
    TEAM/2016-3/26

In the Project, we will explain the role of point

defects (mainly Ga vacancies and hydrogen impurity) in decomposition of InGaN

quantum wells. This decomposition occurs during MOVPE growth of p-type GaN

above these wells in LEDs and laser diodes (LDs) emitting in blue/green

spectral range, and is one of the main reasons why the efficiencies of green

emitters have low efficiencies ("green gap"). In our recent research,

we got for the first time indications that the InGaN decomposition is caused by

strain-driven diffusion of point defects. To understand this phenomenon, we are

planning to do a number of experiments changing growth parameters (doping,

flows of reactants, pressure, temperature, etc) in epitaxial growth, as well as

to do theoretical modelling of point defect and indium diffusion. The samples

will be examined using a number of techniques in collaboration with other labs.

As a result, we should find the way of avoiding the InGaN decomposition in LEDs

and LDs.

 

Benefits

Full remuneration 7 000 PLN per month

(expected net salary at 4 900 PLN per month)

Selection process

 

The recruitment procedure is described in the TEAM call documentation in section 5.4 and available on the FNP website http://www.fnp.org.pl/assets/TEAM_Programme_Competition_Documentation_4_...

 

Recruitment interviews will be held on 6 October 2017 at

IHPP PAS in Warsaw, address: al. Prymasa Tysiąclecia 98 in the New

Technology Building, starting from 9.30 AM. In a case of a requirement

f it could be changed to the skype interview.

 

Additional comments

The contract begins on 16 October 2017

Web site for additional job details

Required Research Experiences

  • RESEARCH FIELD
    PhysicsApplied physics
  • YEARS OF RESEARCH EXPERIENCE
    4 - 10

Offer Requirements

  • REQUIRED EDUCATION LEVEL
    Physics: PhD or equivalent
  • REQUIRED LANGUAGES
    ENGLISH: Good

Skills/Qualifications

Key Responsibilities include:

Epitaxial growth of semiconducting structures, i.e multi quantum – wells, light emitting diodes (LED), laser diodes (LD).

Profile of candidates/requirements:

 

1.PhD Diploma (no more than 5 years).

2.Experience in MOVPE growth of nitrides semiconducting structures as multi Quantum wells, Light Emitting Diodes (LED), Laser Diodes (LD).

3.Very good spoken and written English.

4. Strong motivation for scientific work. Motivation for the research work

 

 

 

Specific Requirements

1.Application form.

2.Curriculum Vitae

3.Summary of professional accomplishments with concise information about the candidate interests and scientific achievements.

4. A copy of PhD diploma.

 

Map Information

Job Work Location Personal Assistance locations
Work location(s)
1 position(s) available at
Institute of High Pressure Physics Polish Academy of Sciences
Poland
Warsaw
01-424
Al. Prymasa Tysiaclecia 98

EURAXESS offer ID: 243582