RESEARCH FIELDPhysics › Computational physics
RESEARCHER PROFILEFirst Stage Researcher (R1)
APPLICATION DEADLINE29/09/2017 00:00 - Europe/Brussels
LOCATIONPoland › Warsaw
TYPE OF CONTRACTTemporary
HOURS PER WEEK40
OFFER STARTING DATE10/10/2017
In the Project, we will explain the role of point defects (mainly Ga vacancies and hydrogen impurity) in decomposition of InGaN quantum wells. This decomposition occurs during MOVPE growth of p-type GaN above these wells in LEDs and laser diodes (LDs) emitting in blue/green spectral range, and is one of the main reasons why the efficiencies of green emitters have low efficiencies ("green gap"). In our recent research, we got for the first time indications that the InGaN decomposition is caused by strain-driven diffusion of point defects. To understand this phenomenon, we are planning to do a number of experiments changing growth parameters (doping, flows of reactants, pressure, temperature, etc) in epitaxial growth, as well as to do theoretical modelling of point defect and indium diffusion. The samples will be examined using a number of techniques in collaboration with other labs. As a result, we should find the way of avoiding the InGaN decomposition in LEDs and LDs.
Full remuneration 6 500 PLN per month
(expected net salary at 4 500 PLN per month)
The recruitment procedure is described in the TEAM call documentation in section 5.4 and available on the FNP website http://www.fnp.org.pl/assets/TEAM_Programme_Competition_Documentation_4_...
Recruitment interviews will be held on 3 October 2017 at
IHPP PAS in Warsaw, address: al. Prymasa Tysiąclecia 98 in the New
Technology Building, starting from 9.30 AM. In a case of a requirement
it could be changed to the skype interview.
Web site for additional job details
REQUIRED EDUCATION LEVELPhysics: Master Degree or equivalent
REQUIRED LANGUAGESENGLISH: Good
Key responsibilities include:
- Skills developing in the basics of quantum mechanical calculations in Density Functional Theory(DFT);
- Preparing ofthe configuration of atomic systems for modeling in xyz format;
- Calculation performingusing computational ab initioprograms: VASP, SIESTA QUANTUM ESPRESSO;
- Analysis of calculation results, formulation of conclusions up to the stage of preparation of scientific publications and presentation of results in seminars and conferences.
Profile of candidates/requirements:
1.Completed higher education studies in Physics or Electronics or Material Science or related.
2.Experience in the research undertaken on nitride semiconductors.
3. Motivation for the research work.
EURAXESS offer ID: 243095