04/09/2017

PhD student - TEM measurements (Employment contract)


  • ORGANISATION/COMPANY
    FluGaN
  • RESEARCH FIELD
    PhysicsApplied physics
  • RESEARCHER PROFILE
    First Stage Researcher (R1)
  • APPLICATION DEADLINE
    29/09/2017 00:00 - Europe/Brussels
  • LOCATION
    Poland › Warsaw
  • TYPE OF CONTRACT
    Temporary
  • JOB STATUS
    Full-time
  • HOURS PER WEEK
    40
  • OFFER STARTING DATE
    10/10/2017
  • REFERENCE NUMBER
    TEAM/2016-3/26

Influence of point defects on InGaN quantum well decomposition in technology of blue/green laser diodes and LEDs

In the Project, we will explain the role of point defects (mainly Ga vacancies and hydrogen impurity) in decomposition of InGaN quantum wells. This decomposition occurs during MOVPE growth of p-type GaN above these wells in LEDs and laser diodes (LDs) emitting in blue/green spectral range, and is one of the main reasons why the efficiencies of green emitters have low efficiencies ("green gap"). In our recent research, we got for the first time indications that the InGaN decomposition is caused by strain-driven diffusion of point defects. To understand this phenomenon, we are planning to do a number of experiments changing growth parameters (doping, flows of reactants, pressure, temperature, etc) in epitaxial growth, as well as to do theoretical modelling of point defect and indium diffusion. The samples will be examined using a number of techniques in collaboration with other labs. As a result, we should find the way of avoiding the InGaN decomposition in LEDs and LDs.

Benefits

Full remuneration 6 500 PLN per month

(expected net salary at 4 500 PLN per month)

Selection process

 

The recruitment procedure is described in the TEAM call documentation in section 5.4 and available on the FNP website http://www.fnp.org.pl/assets/TEAM_Programme_Competition_Documentation_4_...

 

Recruitment interviews will be held on 3 October 2017 at

IHPP PAS in Warsaw, address: al. Prymasa Tysiąclecia 98 in the New

Technology Building, starting from 09.30 AM. In a case of a requirement

 it could be changed to the skype interview.

 

Web site for additional job details

Required Research Experiences

  • RESEARCH FIELD
    EngineeringMaterials engineering
  • YEARS OF RESEARCH EXPERIENCE
    1 - 4

Offer Requirements

  • REQUIRED EDUCATION LEVEL
    Engineering: Master Degree or equivalent
  • REQUIRED LANGUAGES
    ENGLISH: Good

Skills/Qualifications

1.Completed higher education studies in Physics/ Material Science or related

2.Knowledge of the basics of the methods of materials investigations, especially transmission electron microscopy

3.Experience in the research undertaken on nitride semiconductors will be an asset

4.Good knowledge of English in speaking and writing

5. Motivation for the research work

Specific Requirements

Required documents:

1.Application

2.CV

3.Summary of professional accomplishments with concise information about the candidate’s academic interests and past achievements

4. A copy of higher education diploma

 

Map Information

Job Work Location Personal Assistance locations
Work location(s)
1 position(s) available at
Institute of High Pressure Physics Polish Academy of Sciences
Poland
Warsaw
01-424 Warsaw
Al.Prymasa Tysiaclecia 98

EURAXESS offer ID: 243071