PhD student (Employment contract)

    PhysicsSolid state physics
    First Stage Researcher (R1)
    03/09/2017 00:00 - Europe/Brussels
    Poland › Warsaw

Terahertz Sensor Based on Topological Materials

Despite the long time from its discovery, there exists still many important problems hindering real world applications of topological isolators (TI). The main problems are: i) TI states are preserved only at cryogenic temperatures (below 10 K); ii) there are no structures/mechanisms allowing fast electrical switching (on/off) of TI states iii) until now most of the discoveries are made using HgTe/CdTe semiconductor materials that do not allow standard high temperature device processing. The general scientific objective of this project is to research on novel two-dimensional structures possessing topological insulator phase that overcomes these existing problems. These novel topological insulators will be obtained special arrangements of III-V or II-VI semiconductor quantum wells. We will search for the best TI semiconductor structures by growing different structures and by tuning the energy band structure with hydrostatic pressure. We will particularly focus on the investigation of hydrostatic pressure driven evolution of basic properties because it allows accelerate research on finding the best parameters (energy band structure, energy and momentum relaxation times, and photon absorption and emission coefficients) in different topological phases without use of very time and budget consuming repetitive growth of the multiple structures. We will use “optical” excitations in Terahertz frequencies range as the main experimental tool. The measurements of inter- and intra-Landau level transitions, lying in THz range, as well as THz photoconductivity will be used to probe the band structure evolution. Independently, research on new THz plasma oscillation/instabilities in different topological insulators phases will be explored as an independent important scientific objective of the project. Thanks to these research we want to answer the basic science questions about the universality of the physical model of 2D TI and about mechanisms of breaking of the topological protection. We want also to answer the question how specific TI states and Dirac fermions (linear dispersion) in TI may modify/influence the THz plasma wave oscillations and instabilities discovered recently in nanometer size 2D structures. Acquired answers for questions mentioned above will provide basis for realizing new high frequency devices based on topological materials. To reach such devices the project proposes the research on innovative HgCdTe and GaSb/InAs structures overcoming existing up today problems: i) having TI states preserved up to elevated temperatures (up to 300 K) ii) allowing fast electrical switching (on/off) of TI states iii) explore GaSb/InAs quantum TI structures that can be fabricated using a standard semiconductor processing. Preliminary research that show importance, feasibility and methodology has already started in the frame of international French/Polish/Russian “LIA-TERAMIR”. Feasibility of main project objectives is already documented by multiple high impact international journals publications of the project author. LIA-TERAMIR will also serve for the present project as the main frame of international collaboration providing, via partners from France and Russia, a privileged access to unique material/samples technology and equipment. At the same time the project will allow to increase the research potential in Poland, at IHPP PAS, by building by world-class leaders, the TEAM having strong international collaborations and performing basic/applied physics research on TI structures (TERA-TEAM) in view of demonstration of innovative TI based high frequency devices as well as terahertz radiation sensors.


Remuneration total cost 6 000 PLN

(expected net salary at 4 200 PLN)


Selection process

The recruitment procedure is described in the TEAM call documentation in section 5.4 and available on the FNP website http://www.fnp.org.pl/assets/TEAM_Programme_Competition_Documentation_4_...

Recruitment interviews will be held on 14 and 15 September 2017 at IHPP PAS in Warsaw, address: al. Prymasa Tysiąclecia 98 in the New Technology Building, starting from 10.00 AM. In a case of a requirement from an applicant side it could be changed to the skype interview.

Additional comments


Terahertz Sensor Based on Topological Materials

Project is carried out within the TEAM programme of the Foundation for Polish Science


Offer Requirements

    ENGLISH: Good


1. Completed higher education studies;

2. Status of doctoral student (third level degree student);

3. Documented scientific achievements in the form of publications will be an asset;

4. Knowledge of solid state physics, semiconductor physics, and quantum mechanics;

5. Experience in conducting of magnetotransport research will be an asset;

6. Experience in semiconductor research using high pressure liquid chambers;

7. Experience in the study of topological materials will be an asset;

8. Good spoken and written English;

9. Motivation for research work.

Specific Requirements

Required documents:

1. Application

2. CV

3. Summary of professional accomplishments with concise information about the candidate's academic interests and past achievements, as well as possible participation in larger research projects (in a volume not exceeding 3500 characters).

4. A copy of the higher education diploma.

5. Confirmation of doctoral student status

Work location(s)
1 position(s) available at
Institute of High Pressure Physics PAS
al. Prymasa Tysiaclecia 98

EURAXESS offer ID: 237164